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Influence of Thermal Annealing on the Electrical and Gas-Sensitive Properties of MOS Silicon-Based Tunnel Diodes

✍ Scribed by V. I. Gaman; V. I. Balyuba; V. Yu. Gritsyk; T. A. Davydova; V. M. Kalygina; L. S. Khludkova


Book ID
110336155
Publisher
Springer
Year
2001
Tongue
English
Weight
137 KB
Volume
44
Category
Article
ISSN
1573-9228

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