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Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases

✍ Scribed by V. I. Balyuba; V. Yu. Gritsyk; T. A. Davydova; V. M. Kalygina; S. S. Nazarov; A. V. Panin; L. S. Khludkova

No coin nor oath required. For personal study only.

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