Post-breakdown conduction mechanism of t
β
Kenji Komiya; Takashi Oka; Naoki Okada; Yasuhisa Omura
π
Article
π
2003
π
John Wiley and Sons
π
English
β 968 KB
## Abstract This study investigates extremely thin silicon oxide with thicknesses of 3 to 5 nm produced by various fabrication processes, and the postβbreakdown characteristics are studied. This paper describes the results of comparison. By analysis of the conduction characteristics after intrinsic