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Mechanism for the breakdown of thin oxide films on aluminum

✍ Scribed by G. S. Turchaninov


Book ID
112417611
Publisher
Springer
Year
1969
Tongue
English
Weight
146 KB
Volume
12
Category
Article
ISSN
1573-9228

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Post-breakdown conduction mechanism of t
✍ Kenji Komiya; Takashi Oka; Naoki Okada; Yasuhisa Omura πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 968 KB

## Abstract This study investigates extremely thin silicon oxide with thicknesses of 3 to 5 nm produced by various fabrication processes, and the post‐breakdown characteristics are studied. This paper describes the results of comparison. By analysis of the conduction characteristics after intrinsic