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Mechanism and modeling of silicon carbide formation and engulfment in industrial silicon directional solidification growth

โœ Scribed by Lili Zheng; Xu Ma; Dongli Hu; Hui Zhang; Tao Zhang; Yuepeng Wan


Book ID
108166276
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
796 KB
Volume
318
Category
Article
ISSN
0022-0248

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Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place