Study of the evaporation mechanism in si
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Dr. S. K. Lilov
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Article
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1994
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John Wiley and Sons
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English
โ 252 KB
๐ 2 views
Investigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200-2600) "C takes place