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Mechanical properties and density of BCxNyfilms grown by low-pressure chemical vapor deposition from triethylamine borane

โœ Scribed by V. R. Shayapov; M. L. Kosinova; A. P. Smirnov; E. A. Maksimovskii; B. M. Ayupov; Yu. M. Rumyantsev

Book ID
110167010
Publisher
SP MAIK Nauka/Interperiodica
Year
2011
Tongue
English
Weight
173 KB
Volume
47
Category
Article
ISSN
0020-1685

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Electrical properties of N atomic layer
Electrical properties of N atomic layer doped Si epitaxial films grown by ultraclean low-pressure chemical vapor deposition
โœ Youngcheon Jeong; Masao Sakuraba; Junichi Murota ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 304 KB

Sheet carrier concentration and Hall mobility of the N atomic layer doped Si epitaxial films on Si(1 0 0) were obtained by Hall effect measurement. It is found that the N atoms act as a donor. Donor activation ratio tends to decrease with increasing N amount, and the typical ratio is about 0.4% at t