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Mechanical characteristics of aluminum thin films on silicon and gallium arsenide

✍ Scribed by Jwo-Huei Jou; Cheng-Sheng Chung

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 629 KB
Volume: 235
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(93)90258-q

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## Abstract The method of GaAs film growth from a solution between two substrates was considered. The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results. The investigation of the film roughness as a function o