Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible.
โฆ LIBER โฆ
Measurements of the profile of an intense electron beam
โ Scribed by A. V. Bubley; V. M. Panasyuk; V. V. Parkhomchuk; V. B. Reva
- Book ID
- 110167251
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 260 KB
- Volume
- 49
- Category
- Article
- ISSN
- 0020-4412
No coin nor oath required. For personal study only.
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