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Pitch angle measurement of an intense rotating relativistic electron beam


Publisher
Elsevier Science
Year
1978
Tongue
English
Weight
159 KB
Volume
28
Category
Article
ISSN
0042-207X

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โœฆ Synopsis


Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible. A simple tight-binding model is described that is applicable for the calculation of the electronic properties of the bulk oxides and the oxide-semiconductor interfaces. Results are given only for selected bulk properties, namely the photoemission and X-ray emission spectra, and the dielectric constants of SiOl, GeOl and various ABO&ype oxides.


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