Pitch angle measurement of an intense rotating relativistic electron beam

• Publisher: Elsevier Science
• Year: 1978
• Tongue: English
• Weight: 159 KB
• Volume: 28
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(78)80628-9

✦ Synopsis

Classified abstracts 3373-3384 11 3373. Some properties of the oxides of the tetrahedral semiconductors and the oxide-semiconductor interfaces. (USA) Continuous-random-network models have been constructed for the Si-SiOl interface. It is found that an abrupt interface with no SiO, layer is possible. A simple tight-binding model is described that is applicable for the calculation of the electronic properties of the bulk oxides and the oxide-semiconductor interfaces. Results are given only for selected bulk properties, namely the photoemission and X-ray emission spectra, and the dielectric constants of SiOl, GeOl and various ABO&ype oxides.