Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry

✍ Scribed by Paillard, V.; Puech, P.; Sirvin, R.; Hamma, S.; Roca i Cabarrocas, P.

• Book ID: 121811614
• Publisher: American Institute of Physics
• Year: 2001
• Tongue: English
• Weight: 286 KB
• Volume: 90
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.1396828