Measurement of the electron saturation velocity in an AlGaAs/InGaAs quantum well
β Scribed by G. I. Ayzenshtat; V. G. Bozhkov; A. Yu. Yushchenko
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 263 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1573-9228
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π SIMILAR VOLUMES
Saturation of the D 0 1s-2p + transition, the D --singlet transition and CR has been studied in donor (Si)-doped GaAs/AlGaAs multiple-quantum-well samples by magneto-transmission and magneto-photoconductivity measurements with the UCSB free electron laser. Effective lifetimes of the D 0 1s-2p + tran
## Abstract Electronic properties of the Si Ξ΄βdoped AlGaAs/GaAs heterostructure such as the electron density and electron mobility have been studied when the Al concentration in the vicinity to the silicon (__x__~Al~(Si)) is varied. Shubnikovβde Haas and quantum Hall effect measurements at 4.2 K ha