𝔖 Bobbio Scriptorium
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Measurement-based large-signal diode modeling system for circuit and device design

✍ Scribed by Root, D.E.; Pirola, M.; Fan, S.; Anklam, W.J.; Cognata, A.


Book ID
114551714
Publisher
IEEE
Year
1993
Tongue
English
Weight
583 KB
Volume
41
Category
Article
ISSN
0018-9480

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A new instantaneous model of MESFET and
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## Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an __X__‐band hybrid amplifier. Excellent agreement between measurements and simulated p