Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

✍ Scribed by Reggiani, S.; Gnani, E.; Rudan, M.; Baccarani, G.; Corvasce, C.; Barlini, D.; Ciappa, M.; Fichtner, W.; Denison, M.; Jensen, N.; Groos, G.; Stecher, M.

• Book ID: 114617989
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 942 KB
• Volume: 52
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2005.856807