MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement

✍ Scribed by G Vellianitis; G Apostolopoulos; G Mavrou; K Argyropoulos; A Dimoulas; J.C Hooker; T Conard; M Butcher

• Book ID: 108215012
• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 104 KB
• Volume: 109
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2003.10.052