𝔖 Bobbio Scriptorium
✦   LIBER   ✦

MBE growth of ZnMgCdS compounds on (001) GaAs for UV-A sensors

✍ Scribed by M. Enami; K. Tsutsumi; F. Hirose; S. Katsuta; M. Kobayashi

Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
102 KB
Volume
1
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

MBE Growth of Strained InxGa1βˆ’xAs on GaA
MBE Growth of Strained InxGa1βˆ’xAs on GaAs(001)
✍ Nemcsics, Γ‘. ;Olde, J. ;Geyer, M. ;Schnurpfeil, R. ;Manzke, R. ;Skibowski, M. πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 615 KB
Direct MBE growth of GaN on GaAs substra
Direct MBE growth of GaN on GaAs substrates for integrated short wavelength emitters
✍ A Georgakilas; K Tsagaraki; E Makarona; G Constantinidis; M Adroulidaki; M Kayam πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 404 KB

The growth and material properties of GaN heteroepitaxial layers on vicinal (1 0 0) and exact (1 1 1)B substrates have been investigated, using molecular beam epitaxy (MBE) with N 2 RF-plasma source. We examined the approach to grow GaN directly on the oxide desorbed GaAs, without the incidence of a