Mapping individual impurities in three d
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Katerina Busuttil
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Article
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2007
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Elsevier Science
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English
β 108 KB
Dopant atoms tend to cluster around defects and dislocations on Si, even when they are uniformly implanted into the substrates, say researchers from IBM and Imago Scientific Instruments [Thompson et al., Science (2007) 317, 1370]. They have used laser-assisted atom probe tomography (APT), to produce