Dopant atoms tend to cluster around defects and dislocations on Si, even when they are uniformly implanted into the substrates, say researchers from IBM and Imago Scientific Instruments [Thompson et al., Science (2007) 317, 1370]. They have used laser-assisted atom probe tomography (APT), to produce
Mapping grains and their dynamics in three dimensions
✍ Scribed by H.O. Sørensen; B. Jakobsen; E. Knudsen; E.M. Lauridsen; S.F. Nielsen; H.F. Poulsen; S. Schmidt; G. Winther; L. Margulies
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 473 KB
- Volume
- 246
- Category
- Article
- ISSN
- 0168-583X
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✦ Synopsis
The three-dimensional X-ray diffraction (3DXRD) microscope has become a mature tool to investigate the microstructure in the bulk of polycrystalline materials. The present paper describes the 3DXRD method together with two applications. The first application presented is a study of grain rotations during plastic tensile deformation of polycrystalline aluminium. The second is the acquisition of a video revealing the 3D growth of an embedded nuclei during recrystallization of a deformed aluminium sample.
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