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Mapping individual impurities in three dimensions: Characterization

✍ Scribed by Katerina Busuttil

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
108 KB
Volume
10
Category
Article
ISSN
1369-7021

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✦ Synopsis

Dopant atoms tend to cluster around defects and dislocations on Si, even when they are uniformly implanted into the substrates, say researchers from IBM and Imago Scientific Instruments [Thompson et al., Science (2007) 317, 1370]. They have used laser-assisted atom probe tomography (APT), to produce three-dimensional maps of the individual dopant atoms.

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