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Magnetron sputtering system stabilisation for high rate deposition of AlN films

✍ Scribed by Alexey A Fomin; Vladislav Akhmatov; Sergey V Selishchev

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
574 KB
Volume
49
Category
Article
ISSN
0042-207X

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✦ Synopsis

The stabilisation of a planar magnetron sputtering system for reactive sputtering ofAlN in a gaseous mixture ofAr and highly active NH, was examined. The helical instability in the cathode plasma sheath was observed and methods for its damping were proposed. It was found that the deposition oft-axis oriented AIN films at high deposition rates in the range 0.5-3.0 m/h is possible, when the helical instability in the magnetron system is damped.

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