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Magnetostriction and surface roughness of ultrathin NiFe films deposited on SiO[sub 2]

✍ Scribed by M. P. Hollingworth; M. R. J. Gibbs; S. J. Murdoch


Book ID
121815309
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
287 KB
Volume
94
Category
Article
ISSN
0021-8979

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The surface roughness of the semiconductor substrate substantially influences properties of the whole semiconductor/oxide structure. SiO 2 /Si structures were prepared by using low temperature nitric acid oxidation of silicon (NAOS) method and then the whole structure was passivated by the cyanidiza