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Magnetocapacitance and far-infrared photoconductivity in GaSb/InAs composite quantum wells

โœ Scribed by Yang, M. J.; Yang, C. H.; Bennett, B. R.

Book ID
126219242
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
65 KB
Volume
60
Category
Article
ISSN
1098-0121

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The electronic and optical properties of InAs=GaSb heterostructures depend on the type of bonding at the interfaces, InSb bonds or GaAs bonds. We have studied cyclotron resonance (CR) in the far-infrared on two samples, each consisting of a single 30 nm InAs quantum well surrounded by thick GaSb bar