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MA-13 silicon-on-insulator device structures

โœ Scribed by Tasch, A.F., Jr.; Hon-Wai Lam


Book ID
114593574
Publisher
IEEE
Year
1980
Tongue
English
Weight
134 KB
Volume
27
Category
Article
ISSN
0018-9383

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Modification of silicon-on-insulator str
โœ O.V. Naumova; I.V Antonova; V.P. Popov; Yu.V. Nastaushev; T.A. Gavrilova; L.V. L ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 194 KB

Based on the characterization of the ultrathin silicon-on-insulator (SOI) test structures, the effects of charge at the interface between the top silicon layer and the buried oxide (bonded interface) are studied during different technology steps (thinning of the top silicon layer and plasma etching)