Modification of silicon-on-insulator str
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O.V. Naumova; I.V Antonova; V.P. Popov; Yu.V. Nastaushev; T.A. Gavrilova; L.V. L
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Article
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2003
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Elsevier Science
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English
โ 194 KB
Based on the characterization of the ultrathin silicon-on-insulator (SOI) test structures, the effects of charge at the interface between the top silicon layer and the buried oxide (bonded interface) are studied during different technology steps (thinning of the top silicon layer and plasma etching)