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Lump Partitioning of IC Bipolar Transistor Models for High-Frequency Applications

✍ Scribed by Chan, N.N.; Dutton, R.W.


Book ID
118698162
Publisher
IEEE
Year
1985
Tongue
English
Weight
994 KB
Volume
4
Category
Article
ISSN
0278-0070

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Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient