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Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes

✍ Scribed by A. Patanè; M. Henini; A. Polimeni; L. Eaves; P.C. Main; M. Al-Khafaji; A.G. Cullis

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
82 KB
Volume
25
Category
Article
ISSN
0749-6036

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✦ Synopsis

In this work we report the effects of the growth interruption on the optical and microscopic properties of InAs/GaAs self-assembled quantum dots grown by molecular beam epitaxy on ( 100) and (311)B oriented GaAs substrates. The growth interruption applied after the deposition of the InAs layer strongly affects the optical and microscopic properties of the dots, thus providing evidence of strong nonequilibrium effects on dot self-assembly. These effects are enhanced for dots grown on high-index planes and can be used to tune the emission energy and to improve the luminescence intensity of the dots.

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