We report the preparation of arsenic-doped ZnO films on silicon(1 0 0) using ZnO/As 2 O 3 targets by pulsed laser ablation. As 2 O 3 was used as a p-type dopant source material for arsenic doping in ZnO. Hall effect measurements show that the stable p-type films with hole carrier concentration of ab
Luminescence hydrogenated nanoamorphous Si films fabricated by reactive pulsed laser ablation
β Scribed by Wanbing Lu; Xingkuo Li; Xinzhan Wang; Liping Wu; Li Han; Guangsheng Fu; Wei Yu
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 808 KB
- Volume
- 176
- Category
- Article
- ISSN
- 0921-5107
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β¦ Synopsis
Hydrogenated nanoamorphous Si (na-Si:H) films have been fabricated by reactive pulsed laser ablation technique with hydrogen as reactive gas. It is found that the hydrogen pressure has a great effect on both the structure and photoluminescence (PL) properties of the films. Increasing the hydrogen pressure leads to a structural transition of the films from amphorous Si to na-Si:H, and the PL center wavelength of the na-Si:H films is varied with the hydrogen pressure. The PL decay times of the na-Si:H films are in the nanosecond scale and are shorter on the high energy side of their PL spectrum. The results demonstrate that the na-Si:H films are promising candidates for visible, tunable and high-performance light-emitting devices.
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