Exciton oscillator strength in GaAs/AlAs
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I.L. Aleiner; E.L. Ivchenko; V.P. Kochereshko; G.L. Sandler; P. Lavallard; R. Pl
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Article
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1993
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Elsevier Science
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English
โ 139 KB
We present resonance reflectivity measurements performed on graded GaAs/AlAs superlattices in the transitional region from type I to type II. A theory of exciton states and exciton oscillator strength is developed making allowance for the mixing of \(\Gamma_{1}, X_{1}\) and \(X_{3}\) electron states