Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices
β Scribed by N. N. Ledentsov; N. Tsukada; K. Ploog
- Book ID
- 104721969
- Publisher
- Springer
- Year
- 1992
- Tongue
- English
- Weight
- 364 KB
- Volume
- 54
- Category
- Article
- ISSN
- 1432-0630
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π SIMILAR VOLUMES
We performed the precision measurements of the near-normal far-infrared reflection and transmission spectra of the MBE-grown (GaAs) n /(AlAs) n (n = 1, 2, 4) superlattices. The results obtained show a noticeable (almost twofold) increase in the AlAs-phonon damping when n is decreased from 4 to 1. We
Steady-state and time-resolved photoluminescence of (GaAs) 7 (AlAs) 9 type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T > 30 K, the domi