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Luminescence and photosensitization properties of ensembles of silicon nanocrystals in terms of an exciton migration model

✍ Scribed by V. A. Demin; E. A. Konstantinova; P. K. Kashkarov

Book ID
111439753
Publisher
Springer
Year
2010
Tongue
English
Weight
882 KB
Volume
111
Category
Article
ISSN
1063-7761

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Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the 1Ξ”-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation