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Exciton states and photoluminescence of silicon and germanium nanocrystals in an Al2O3matrix

✍ Scribed by I. M. Kupchak; Yu. V. Kryuchenko; D. V. Korbutyak; A. V. Sachenko; É. B. Kaganovich; É. G. Manoĭlov; É. V. Begun

Book ID
111444132
Publisher
Springer
Year
2008
Tongue
English
Weight
271 KB
Volume
42
Category
Article
ISSN
1063-7826

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Multilayers of Ge nanocrystals embedded
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In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 °C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing