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Photosensitized generation of singlet oxygen in porous silicon studied by simultaneous measurements of luminescence of nanocrystals and oxygen molecules

โœ Scribed by Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.; Osminkina, L. A.; Timoshenko, V. Yu.


Book ID
115503543
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
526 KB
Volume
110
Category
Article
ISSN
0021-8979

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Photosensitized generation of singlet ox
โœ Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.; Osminkina, L. A.; Timoshe ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› American Institute of Physics ๐ŸŒ English โš– 526 KB

Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the 1ฮ”-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation