Photosensitized generation of singlet ox
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Gongalsky, M. B.; Kharin, A. Yu.; Zagorodskikh, S. A.; Osminkina, L. A.; Timoshe
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Article
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2011
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American Institute of Physics
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English
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Photosensitization of singlet oxygen generation in porous silicon (PSi) was investigated by simultaneous measurements of the photoluminescence (PL) of silicon nanocrystals (nc-Si) and the infrared emission of the 1ฮ-state of oxygen molecules at 1270 nm (0.98 eV) at room temperature. Photodegradation