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LPE growth of p(n)InAs1-ySby-n(p)GaSb(AlxGa1-xSb) Heterostructures

โœ Scribed by Dr. L. D. Pramatarova


Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
232 KB
Volume
19
Category
Article
ISSN
0232-1300

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## Abstract Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)โ€doped GaSb substrate were fabricated, with the purpose of obtaining GaSb pโ€n homoโ€junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and postโ€grow