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LPE growth of InGaAsP:InP high purity layers using rare earth elements

✍ Scribed by R K Sarin; A T Gorelenok; V I Korolkov


Book ID
112871974
Publisher
Springer-Verlag
Year
1990
Tongue
English
Weight
183 KB
Volume
13
Category
Article
ISSN
0250-4707

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LPE growth of InP layers from rare-earth
✍ J. Grym; O. ProchΓ‘zkovΓ‘; J. Zavadil; K. ZdΓ‘nskΓ½ πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 463 KB

Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture