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LPE growth of InP layers from rare-earth treated melts for radiation detector structures

✍ Scribed by J. Grym; O. Procházková; J. Zavadil; K. Zdánský

Book ID: 103843998
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 463 KB
Volume: 165
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2009.03.004

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✦ Synopsis

Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors.

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✍ F. Šrobár; O. Procházková 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 239 KB

## Abstract Rare‐earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III‐V compounds. The RE atoms exhibit high chemical affinity preferentially to shallow donors, forming insoluble aggregates that remain in the melt and do n