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Growth and properties of low-doped In0.53Ga0.47As LPE layers using rare-earth oxides

✍ Scribed by J. Novák; M. Kuliffayová; M. Morvic; P. Kordoš


Book ID
107790211
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
318 KB
Volume
96
Category
Article
ISSN
0022-0248

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Since the early proposal that InGaAs/lnGaAs strained-layer superlattices (SLSs) should constitute a new class of optoelectronic materials, very little work has been done to master the growth conditions and optimize the resulting superlattice properties. In this work, we present the results of a prel