✦ LIBER ✦

LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate

✍ Scribed by Q.W. Wang; C.H. Sun; S.H. Hu; J.Y. He; J. Wu; X. Chen; H.Y. Deng; N. Dai

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 701 KB
Volume: 327
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.05.007

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling and simulation of heterojunctio

Modeling and simulation of heterojunction photovoltaic detector based on InAs0.15Sb0.85for free space optical communication

✍ P. K. Maurya; P. Chakrabarti 📂 Article 📅 2008 🏛 Springer US 🌐 English ⚖ 330 KB

Growth and Characterization of Direct-co

Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE

✍ Dr. L. B. Chang; Dr. H. Lan 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 483 KB

Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These

Preparation and characterization of high

Preparation and characterization of highlyc-axis textured MgO buffer layer grown on Si(100) substrate by RF magnetron sputtering for use as growth template of ferroelectric thin film

✍ Wen-Ching Shih; Tzyy-Long Wang; Ming-Han Chiang; Mu-Shiang Wu 📂 Article 📅 2010 🏛 Springer US 🌐 English ⚖ 361 KB