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Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells

✍ Scribed by V. A. Odnoblyudov; A. Yu. Egorov; M. M. Kulagina; N. A. Maleev; Yu. M. Shernyakov; E. V. Nikitina; V. M. Ustinov

Book ID
110138905
Publisher
Springer
Year
2004
Tongue
English
Weight
51 KB
Volume
38
Category
Article
ISSN
1063-7826

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Optical properties and energy transfer i
Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission
✍ Rudno-Rudziński, W. ;Sęk, G. ;Ryczko, K. ;Syperek, M. ;Misiewicz, J. ;Semenova 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB

## Abstract Tunnel injection structure consisting of InAs self assembled quantum dots emitting light at the second telecom window at 1.3 μm and an InGaAsN injector quantum well is investigated by means of optical spectroscopy and the results compared to the injector‐free reference sample. The photo