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Low temperature thermo-diodes of GaAs, doped with Zn

โœ Scribed by S.P. Logvinenko; O.A. Rossoshanskii


Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
219 KB
Volume
16
Category
Article
ISSN
0011-2275

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Recent advances in high quality, low doped GaAs and nรท/n GaAs hi-lo junctions, indicate a different approach to GaAs solar cell design. It is shown in this paper that by using a low doped base and a back surface minority carrier mirror, efficiencies as high as 26% can be obtained at 1 Sun AM 1.5. It