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Design of GaAs solar cells with low doped base

โœ Scribed by S. Bothra; J.M. Borrego

Publisher
Elsevier Science
Year
1990
Weight
321 KB
Volume
28
Category
Article
ISSN
0379-6787

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โœฆ Synopsis

Recent advances in high quality, low doped GaAs and nรท/n GaAs hi-lo junctions, indicate a different approach to GaAs solar cell design. It is shown in this paper that by using a low doped base and a back surface minority carrier mirror, efficiencies as high as 26% can be obtained at 1 Sun AM 1.5. It is also shown that a GaAs solar cell can be designed for 25% efficiency, without the use of an A1GaAs window layer. Instead, an n+/n GaAs hi-lo junction is employed.

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