Radiation resistance of MBE-grown GaInP/GaAs-based solar cells
✍ Scribed by A. B. Kazantsev; J. Lammasniemi; R. Jaakkola; M. Rajatora; E. Rauhala; J. Räisänen; R. K. Jain; M. Pessa
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 229 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1062-7995
No coin nor oath required. For personal study only.
✦ Synopsis
Proton irradiation-based degradation characteristics for molecular beam epitaxy (MBE) grown Ga 0Á51 In 0Á49 P/GaAs single-junction tandem solar cells of n/p con-®guration are reported. The cells were irradiated with 3-MeV protons up to ¯uences of 10 13 cm 72 . The cells were characterized with current±voltage (I±V) measurements at AMO conditions, and with spectral measurements. The damage coecient for the GaAs cells was calculated using numerical modelling by the PC-1D program, and the result was compared with the InP damage coecient. By using the `displacement damage dose' approach, the degradation characteristics were compared with the published data for InP and GaAs/Ge solar cells. In addition, these MBE results were compared with the radiation behavior of metal-organic chemical vapor deposition (MOCVD)-grown Ga 0Á51 In 0Á49 P/GaAs single-, and double-junction solar cells of p/n con®guration.