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Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

โœ Scribed by Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M


Book ID
119951106
Publisher
Institute of Physics
Year
2006
Tongue
English
Weight
454 KB
Volume
39
Category
Article
ISSN
0022-3727

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X-ray diffraction analysis of step-grade
โœ Hai Lin; Yijie Huo; Yiwen Rong; Robert Chen; Theodore I. Kamins; James S. Harris ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 986 KB

High resolution X-ray diffraction reciprocal space mapping (RSM) is used to study the crystal quality of step-graded In x Ga 1 ร€ x As buffer layers grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE) using two growth methods. The lateral correlation length of the buffer layers are descr