Low-temperature solid-phase-crystallization in Si1−xGex/SiO2

✍ Scribed by S.K Park; S Yamaguchi; N Sugii; K Nakagawa; M Miyao

• Book ID: 104309137
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 126 KB
• Volume: 159-160
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/s0169-4332(00)00096-9

✦ Synopsis

Ž

. Ž . Solid-phase crystallization SPC properties of Si Ge x s 0-0.3 layers on SiO have been investigated by using 1yx

x 2 ellipsometric spectroscopy. Crystallinity of the Si Ge layers is significantly affected by both annealing-time and 1yx x

Ge-concentration x. The crystallinity abruptly increases at the end of the incubation time and gradually saturated during the crystallization time. As x increases, we have found that the nucleation is significantly enhanced and the estimated incubation Ž . time of x s 0.3 is about 1r100 of that of pure Si x s 0 . The crystallization time defined as the time to complete SPC after nucleation also significantly decreases with increasing x. Such changes of the crystallinity in the Ge-doped Si Ge layers 1yx x ``p erhaps originates from the difference between bond energies of Si Si, Si Ge, and Ge Ge. The decrease of bond energy activates both nucleation and crystal-growth process in Si Ge layers.