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Low temperature mobility in SiSi1−xGex quantum wells

✍ Scribed by J. Tutor; J.A. Bermúdez; F. Comas


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
376 KB
Volume
215
Category
Article
ISSN
0040-6090

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Intersubband transitions in strained Si/
✍ Georgios Hionis; Maria Tsetseri; Anna Zora; Georgios P. Triberis 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 151 KB

The energy subbands in pseudomorphic p-type Si/Si 1-x Ge x /Si quantum wells are calculated within the multiband effective-mass approximation that describes the heavy, light and split-off hole valence bands. We examine the intersubband transitions in this system and the selection rules are obtained