Low temperature growth of transparent conducting ZnO films by plasma assisted deposition

✍ Scribed by Nishii, A. ;Uehara, T. ;Sakano, T. ;Nabetani, Y. ;Akitsu, T. ;Kato, T. ;Matsumoto, T. ;Hagihara, S. ;Abe, O. ;Hiraki, S. ;Fujikawa, Y.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 599 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669650

✦ Synopsis

Abstract

Transparent conducting ZnO films are deposited by plasma assisted deposition technique on glass and plastic substrates at temperatures 60 ∼ 300 °C using metallic Zn, metallic Ga and plasma‐excited oxygen as source materials. Deposited films were characterized by X‐ray diffraction (XRD), optical transmittance in the visible and infrared region, Raman scattering, and Hall measurements. Film properties are controlled by substrate temperature, oxygen source/zinc source supply ratio, and Ga doping. 350 nm‐thick Ga‐doped ZnO films deposited at 290 °C showed low resistivity (∼2 × 10^–4^ Ω cm) and high transmittance in the visible region (∼85%). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)