Helicon-wave-excited plasma sputtering deposition of Ga-doped ZnO transparent conducting films

✍ Scribed by Sugiyama, Mutsumi ;Murayama, Akira ;Imao, Takashi ;Saiki, Keita ;Nakanishi, Hisayuki ;Chichibu, Shigefusa F.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 405 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669616

✦ Synopsis

Abstract

Sputtering deposition of Ga‐doped ZnO (ZnO:Ga) thin films was carried out using the helicon‐wave‐excited plasma sputtering (HWPS) method. The films sputtered above 150 °C had a preferential {0001} orientation. According to the surface‐damage‐free nature, the films having featureless surface morphology exhibited an optical transmittance greater than 80% in the visible spectral wavelengths. However, because the deposition temperature was limited to 250 °C, the electron mobility was limited to as low as 2–3 cm^2^/V s due to the small grain size (∼25 nm). The results indicate that ZnO:Ga films deposited by HWPS can be used in the transparent conducting oxide layer, provided that higher electron mobility is achieved. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)