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Low-temperature fabrication of amorphous BaTiO/sub 3/ thin-film bypass capacitors

✍ Scribed by W. Liu; S. Cochrane; S. Lakshmikumar; D. Knorr; E. Rymaszewski; J. Borrego; T. Lu


Book ID
124154980
Publisher
IEEE
Year
1993
Tongue
English
Weight
298 KB
Volume
14
Category
Article
ISSN
0741-3106

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Thin film capacitors with BaTiO 3 as dielectric and RuO 2 as electrode material have been prepared by rf-magnetron sputtering at temperatures up to 750 1C and under various oxygen partial pressures. They have been analyzed by complex impedance spectroscopy in the temperature range 20-200 1C. At abou