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Low temperature etching of Si in high density plasma using SF6/O2

✍ Scribed by Johann W. Bartha; Johann Greschner; M. Puech; P. Maquin


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
465 KB
Volume
27
Category
Article
ISSN
0167-9317

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## Abstract Low temperature low pressure hollow cathode plasma jet system working in static magnetic field was investigated by means of time resolved Langmuir probe technique. The hollow cathode discharge was excited in a cylindrical nozzle fabricated from Ti by continuous DC, pulsed DC, continuous