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Low-temperature electroluminescence from degenerately doped GaAs diodes

✍ Scribed by Smith, J. Lynn ;Wittmann, H. R.

Book ID
105361558
Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
490 KB
Volume
2
Category
Article
ISSN
0031-8965

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Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence