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Low temperature effects in Si FETs

✍ Scribed by W.E. Howard; F.F. Fang

Publisher
Elsevier Science
Year
1965
Tongue
English
Weight
192 KB
Volume
8
Category
Article
ISSN
0038-1101

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Small- and large-signal measurements of
Small- and large-signal measurements of low-temperature GaAs FETs
✍ B. Boudart; C. GaquiΓ¨re; S. Trassaert; D. ThΓ©ron; B. Splingart; M. Lipka; E. Koh πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 303 KB πŸ‘ 2 views

Low-temperature (LT) GaAs FETs have been realized for high I X V products. They have been extensii:ely characterized under dc, rJ pulsed, and large-signal conditions. The results are analyzed and related to the decice structure. The electricalpassiuant role of the LT GaAs has been demonstrated. Unde