Small- and large-signal measurements of low-temperature GaAs FETs
✍ Scribed by B. Boudart; C. Gaquière; S. Trassaert; D. Théron; B. Splingart; M. Lipka; E. Kohn
- Publisher
- John Wiley and Sons
- Year
- 1996
- Tongue
- English
- Weight
- 303 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Low-temperature (LT) GaAs FETs have been realized for high I X V products. They have been extensii:ely characterized under dc, rJ pulsed, and large-signal conditions. The results are analyzed and related to the decice structure. The electricalpassiuant role of the LT GaAs has been demonstrated. Under dc conditions I X V products of 2.5 W/mm are obtained. Under microwarle frequencies, only 0.4 W/mm were meamred on this deciice. We discuss the relationship between the dielectric relaxation of LT GaAs and the low-power performance of the deoice. New device structures are proposed.