Low temperature adsorption and reaction of NO on GaAs(110)

✍ Scribed by Klaus Kern; Yves Chabal; Gregg Higashi; Andreas Vom Felde; Mark Cardillo

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 432 KB
• Volume: 168
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(90)85130-5

✦ Synopsis

We have used polarized surface infrared spectroscopy in the multiple internal reflection mode to study the chemistry of NO adsorption on GaAs( 110 ) at 90 K. NO is found to bc reactive on the surface at these low temperatures, adsorbing dissociatively and molecularly. The reaction products identified arc molecular NzO, oxygen end bonded with the molecular axis perpendicular to the surface, and a flat-lying hyponitrito species. Heating the surface above 200 K leaves an arsenic nitride on the surface.