Low-pressure vapor-phase epitaxy of silicon on porous silicon
β Scribed by Vescan, L.; Bomchil, G.; Halimaoui, A.; Perio, A.; Herino, R.
- Book ID
- 123213729
- Publisher
- Elsevier Science
- Year
- 1988
- Tongue
- English
- Weight
- 630 KB
- Volume
- 7
- Category
- Article
- ISSN
- 0167-577X
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Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820 Β°C) in a reduced pressure vapour phase epitaxy reactor, using Sill 4 as the reactive gas and a lampheating .Zvstem allowing rapid thermal processing. Silicon epitaxv has been studied on different porous
The aim of this experiment is to grow a thin silicon layer (<50Β΅m) by Liquid Phase Epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 Β΅m epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In thi